Photothermoelectric AZO/SiO ₂ /NiO Device

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device.

Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar c...

A Photothermoelectric Effect in Graphene

Photothermoelectric effect in suspended semiconducting carbon nanotubes.

We have performed scanning photocurrent microscopy measurements of field-effect transistors (FETs) made from individual ultraclean suspended carbon nanotubes (CNTs). We investigate the spatial-dependence, polarization-dependence, and gate-dependence of photocurrent and photovoltage in this system. While previous studies of surface-bound CNT FET devices have identified the photovoltaic effect as...

First principles exploration of NiO and its ions NiO+ and NiO-.

We present a high level ab initio study of NiO and its ions, NiO(+) and NiO(-). Employing variational multireference configuration interaction (MRCI) and single reference coupled-cluster methods combined with basis sets of quintuple quality, 54, 20, and 10 bound states of NiO, NiO(+), and NiO(-) have been studied. For all these states, complete potential energy curves have been constructed at t...

Photothermoelectric and photovoltaic effects both present in MoS2

As a finite-energy-bandgap alternative to graphene, semiconducting molybdenum disulfide (MoS2) has recently attracted extensive interest for energy and sensor applications. In particular for broad-spectral photodetectors, multilayer MoS2 is more appealing than its monolayer counterpart. However, little is understood regarding the physics underlying the photoresponse of multilayer MoS2. Here, we...